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Data Sheet, V1.0, January 2004
BTS 5234G
Smart High-Side Power Switch PROFET Two Channels, 60 m
Automotive Power
Never
stop
thinking.
Smart High-Side Power Switch BTS 5234G
Table of Contents Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 Pin Assignment BTS 5234G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 Package Outlines BTS 5234G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Data Sheet
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Smart High-Side Power Switch PROFET
BTS 5234G
Product Summary
The BTS 5234G is a dual channel high-side power switch in P-DSO-20-21 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology.
P-DSO-20-21
Operating voltage Over voltage protection On-State resistance Nominal load current (one channel active) Current limitation Current limitation repetitive Standby current for whole device with load
Vbb(on)
Vbb(AZ) RDS(ON)
4.5 .. 28 V 41 V 60 m 3.3 A 23 A 6A 2.5 A
IL(nom) IL(LIM) IL(SCr)
Ibb(OFF)
Basic Features
* * * * * * * Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior at under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability
Type BTS 5234G
Data Sheet
Ordering Code Q67060-S6156
3
Package P-DSO-20-21
V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
Protective Functions
* * * * * * * * * Reverse battery protection without external components Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Over voltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD)
Diagnostic Functions
* * * * * * * Enhanced IntelliSense signal for each channel Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source High accuracy of current sense signal at wide load current range Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state
Applications
* C compatible high-side power switch with diagnostic feedback for 12 V grounded loads * All types of resistive, inductive and capacitive loads * Suitable for loads with high inrush currents, so as lamps * Suitable for loads with low currents, so as LEDs * Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Overview
1
Overview
The BTS 5234G is a dual channel high-side power switch (two times 60 m) in P-DSO-20-21 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology.
1.1
Block Diagram
channel 1
VBB load current sense clamp for inductive load
internal power supply logic IN1 IS1 SEN ESD protection
gate control & charge pump open load detection temperature sensor multi step load current limitation OUT1
channel 2
IN2 IS2
control and protection circuit equivalent to channel 1 OUT2 RGND GND
Figure 1
Block Diagram
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb IIN1 VIN1 VIN2 VIS1 VIS2 IIN2 IIS1 IIS2 ISEN
Ibb VBB I L1 V DS1 VOUT1 OUT2 I L2 V DS2 V OUT2 GND IGND
Terms2ch.emf
IN1 IN2
BTS 5234G
IS1 IS2 SEN
OUT1
VSEN
Figure 2
Terms
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Pin Configuration
2
2.1
Pin Configuration
Pin Assignment BTS 5234G
(top view)
VBB nc GND IN1 IS1 IS2 IN2 SEN nc VBB
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
VBB OUT1 OUT1 OUT1 VBB VBB OUT2 OUT2 OUT2 VBB
Figure 3
Pin Configuration P-DSO-20-21
2.2
Pin 4 7 5 6 8
Pin Definitions and Functions
Symbol IN1 IN2 IS1 IS2 SEN I/O OD I I O O I O O Function Input signal for channel 1 Input signal for channel 2 Diagnosis output signal channel 1 Diagnosis output signal channel 2 Sense Enable input for channel 1&2 Protected high-side power output channel 1 Protected high-side power output channel 2 Ground connection Positive power supply for logic supply as well as output power supply not connected
17, 18 ,19 OUT1 12, 13, 14 OUT2 3 1, 10, 11, 20 2, 9 GND VBB nc
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Electrical Characteristics
3
3.1
Electrical Characteristics
Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified: Tj = 25 C Pos. Parameter Symbol Limit Values min. Supply Voltage 3.1.1 3.1.2 Supply voltage Vbb -16 0 28 28 V V Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj(0) = -40C .. 150C) Unit Test Conditions max.
L = 8 H, R = 0.2 1)
3.1.3 3.1.4
VDS Supply Voltage for Load Dump Vbb(LD)
Voltage at power transistor protection
-
52 41
V V
RI = 2 2) RL = 6.8
- 3)
Power Stages 3.1.5 3.1.6 3.1.7 Load current Maximum energy dissipation single pulse Power dissipation (DC)
IL EAS Ptot
-
IL(LIM) A
0.58 1.4 J W
IL(0) = 2 A 4) Tj(0) = 150C Ta = 85 C 5) Tj 150 C
Logic Pins 3.1.8 3.1.9 Voltage at input pin Current through input pin
VIN IIN VSEN
-5 -16 -2.0 -8.0 -5 -16 -2.0 -8.0 -25
10 2.0 10 2.0 10
V
t 2 min
mA
t 2 min
V
3.1.10 Voltage at sense enable pin
t 2 min
mA
3.1.11 Current through sense enable ISEN pin 3.1.12 Current through sense pin
t 2 min
mA
IIS
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Electrical Characteristics Unless otherwise specified: Tj = 25 C Pos. Parameter Symbol Limit Values min. Temperatures Unit Test Conditions max.
Tj 3.1.14 Dynamic temperature increase Tj
3.1.13 Junction Temperature while switching 3.1.15 Storage Temperature ESD Susceptibility
-40 -55
150 60 150
C C C
Tstg
VESD 3.1.16 ESD susceptibility HBM IN, SEN IS OUT
1) 2) 3)
kV -1 -2 -4 1 2 4
according to EIA/JESD 22-A 114B
R and L describe the complete circuit impedance including line, contact and generator impedances Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator Current limitation is a protection feature. Operation in current limitation is considered as "outside" normal operating range. Protection features are not designed for continuous repetitive operation. Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 m thick) for Vbb connection. PCB is vertical without blown air.
4) 5)
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Block Description and Electrical Characteristics
4
4.1
Block Description and Electrical Characteristics
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump.
4.1.1
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 4.2.2.
Vbb = 13.5 V Tj = 25C
90 80 RDS(ON) /m RDS(ON) /m 0 25 50 T /C 75 100 125 150 70 60 50 40 30 -50 -25
160 140 120 100 80 60 40 0 5 10 15 Vbb /V 20 25
Figure 4
Typical On-State Resistance
4.1.2
Input Circuit
Figure 5 shows the input circuit of the BTS 5234G. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses.
IN RIN IIN
RGND GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
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Smart High-Side Power Switch BTS 5234G
Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission.
IN tON tOFF t
VOUT
90% 70%
70%
dV /dtON
30% 10%
dV /dtOFF
30%
t
SwitchOn.emf
Figure 6
Switching a Load (resistive)
4.1.3
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current.
V bb VBB
IL OUT V OUT L, RL
OutputClamp.emf
GND
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Block Description and Electrical Characteristics
V OUT Vbb 0 V OUT(CL) IL
IN = 5V
IN = 0V
t
t
InductiveLoad.emf
Figure 8
Switching an Inductance
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS 5234G. This energy can be calculated with following equation:
V OUT(CL) RL IL L E = ( V bb + V OUT(CL) ) ------------------------- ln 1 + ------------------------- + I L -----RL RL V OUT(CL)
Following equation simplifies under the assumption of RL = 0:
V bb 2 1 E = -- LI L 1 + ------------------------- 2 V OUT(CL)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation.
Vbb = 12 V
0.6 0.5 0.4 0.3 EAS /J 0.2
0.1
0.05 0.04 2 3 4 5 6 I /A 7 8 9 10
Figure 9
Data Sheet
Maximum energy dissipation single pulse, Tj,Start = 150C
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Smart High-Side Power Switch BTS 5234G
Block Description and Electrical Characteristics
4.1.4
Electrical Characteristics
Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 C to +150 C, typical values: Vbb = 13.5 V, Tj = 25 C Pos. Parameter Symbol Limit Values min. General 4.1.1 Operating voltage typ. max. Unit Test Conditions
Vbb
4.5
28
V
4.1.2
Operating current IGND one channel active all channels active Standby current for whole device with load
mA 1.8 3.6 4 8 A 1.5 2.5 2.5 15
VIN = 4.5 V RL = 12 VDS < 0.5 V VIN = 5 V
4.1.3
Ibb(OFF)
VIN = 0 V VSEN = 0 V Tj = 25C Tj = 85C1) Tj = 150C IL = 2.5 A Tj = 25 C Tj = 150 C IL < 0.25 A
Output characteristics 4.1.4 On-State resistance per channel
RDS(ON)
45 90 40 60 115
m
4.1.5
Output voltage drop VDS(NL) limitation at small load currents Nominal load current IL(nom) per channel one channel active two channels active Output clamp Output leakage current per channel Inverse current capability
mV
4.1.6
A 3.3 2.5 -16 -13 0.1 3 -10 6 V A A
Ta = 85 C Tj 150 C 2) 3)
4.1.7 4.1.8 4.1.9
VOUT(CL) IL(OFF) -IL(inv)
IL = 40 mA VIN = 0 V
1)
Data Sheet
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Smart High-Side Power Switch BTS 5234G
Block Description and Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 C to +150 C, typical values: Vbb = 13.5 V, Tj = 25 C Pos. Parameter Symbol Limit Values min. Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Input characteristics 4.1.12 Input resistor 4.1.13 L-input level 4.1.14 H-input level 4.1.15 L-input current 4.1.16 H-input current Timings 4.1.17 Turn-on time to 90% Vbb 4.1.18 Turn-off time to 10% Vbb 4.1.19 slew rate 30% to 70% Vbb 4.1.20 slew rate 70% to 30% Vbb
1) 2)
Unit
Test Conditions
typ.
max. - 1) - 1)2)
Rthjc Rthja
48 45
35
K/W K/W
RIN VIN(L) VIN(H) IIN(L) IIN(H) tON tOFF
dV/ dtON -dV/ dtOFF
1.8 -0.3 2.5 3 10
3.5
5.5 1.0 5.7
k V V A A
18 38
75 75
VIN = 0.4 V VIN = 5 V RL = 12 Vbb = 13.5 V RL = 12 Vbb = 13.5 V RL = 12 Vbb = 13.5 V RL = 12 Vbb = 13.5 V
100 120 0.1 0.1 0.25 0.25
250 250 0.5 0.5
s s V/s V/s
Not subject to production test, specified by design Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 m thick) for Vbb connection. PCB is vertical without blown air. Not subject to production test, parameters are calculated from RDS(ON) and Rth
3)
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing.
Data Sheet
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Smart High-Side Power Switch BTS 5234G
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL 25 20 15 10 5 5 10 15 20 VDS
CurrentLimitation.emf
Figure 10
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN t IL IL(LIM) IL(SCr) tOFF(SC) t IIS t
OverLoad .emf
Figure 11
Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V).
Data Sheet
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Smart High-Side Power Switch BTS 5234G
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
P diss(rev)
Vbb = ( VDS(rev) IL ) + -------------R GND all channels
2
The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry.
VBB
IN IS
RIN
ZDAZ
SEN RSEN ZDESD
logic
internal ground
RGND GND
OUT
V OUT
OverVoltage .emf
Figure 12
Over Voltage Protection
4.2.4
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground, the BTS 5234G securely changes to or keeps in off state.
Data Sheet 16 V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
4.2.5
Electrical Characteristics
Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 C to +150 C , typical values: Vbb = 13.5 V, Tj = 25 C Pos. Parameter Symbol Limit Values min. Over Load Protection 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 Load current limitation IL(LIM) Repetitive short circuit IL(SCr) current limitation Initial short circuit shut tOFF(SC) down time Thermal shut down temperature Thermal hysteresis 23 14 6 0.54 150 170
1)
Unit
Test Conditions
typ.
max.
42 28
A A A ms C K
VDS = 7 V VDS = 14 V Tj = Tj(SC) 1) TjStart = 25 C 1)
-1)
Tj(SC)
Tj
7
Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) Reverse current through GND pin
-VDS(rev)
900
mV
4.2.7
-IGND
65
mA
IL = -3.5 A Vbb = -13.5 V Tj = 150C Vbb = -13.5 V 1)
Ground Circuit 4.2.8 Integrated Resistor in RGND GND line 115 220 350
Over Voltage 4.2.9 Over voltage protection
Vbb(AZ)
41
47
53
V
Ibb = 2 mA
Loss of GND 4.2.10 Output leakage current while GND disconnected
1) 2)
IL(GND)
1
mA
IIN = 0, ISEN = 0, IIS = 0, IGND = 0 1) 2)
Not subject to production test, specified by design no connection at these pins
Data Sheet
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Smart High-Side Power Switch BTS 5234G
4.3
Diagnosis
For diagnosis purpose, the BTS 5234G provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided in ON-state as long as no failure mode occurs. In case of open load in OFF-state, the voltage VIS(fault) is fed to the diagnosis pin.
S OL VBB
ROL
IN1 Rlim RIN1 IS1
0 1 1 0
IIS1 gate control OUT1 V IS(fault)
0 1
C
SEN RSEN IN2 Rlim RIS1 RIS2 RIN2 IS2
0 1
VOUT(OL) channel 1 gate control IIS2
diagnosis
GND
channel 2
OUT2 load
Sense.emf
Figure 13 Table 1
Block Diagram: Diagnosis Truth Table Input Level L Output Level Z Z Z Diagnostic Output SEN = H Z Z Z SEN = L Z Z Z Z Z Z
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Operation Mode Normal Operation (OFF) Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load
Vbb
< VOUT(OL) > VOUT(OL)
18
VIS = VIS(fault)
Z
VIS = VIS(fault)
Data Sheet
Smart High-Side Power Switch BTS 5234G
Table 1
Truth Table Input Level H Output Level ~Vbb < Vbb << Vbb Z Diagnostic Output SEN = H SEN = L Z Z Z Z Z Z
Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over Temperature Short Circuit to Vbb Open Load
IIS = IL / kILIS
Z Z Z
Vbb ~Vbb
IIS < IL / kILIS
Z
L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
4.3.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 . A typical value is 4.7 k.
8000 7000 6000 5000 kILIS 4000 3000 2000 1000 0 0.5 1 1.5 2 IL /A 2.5 3
dummy Tj = 150C dummy Tj = -40C
3.5
4
Figure 14
1)
Current sense ratio kILIS1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet
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Smart High-Side Power Switch BTS 5234G
In case of over current as well as over temperature, the current sense signal is switched off. As a result, one threshold is enough to distinguish between normal and faulty operation. Open load and over load can be differentiated by switching off the channel and using open load detection in off-state. Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15.
IN OFF ON tON t
V OUT
t IL
IIS
tsIS(ON)
tsIS(LC)
t
t
SwitchOn .emf
Figure 15
Timing of Diagnosis Signal in ON-state
4.3.2
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 16.
IN ON tOFF Open Load t IL OFF t
V OUT
IIS
td(fault)
ts(fault) V IS(fault) / RS
t
t
SwitchOff.emf
Figure 16
Timing of Diagnosis Signal in OFF-state
Data Sheet
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Smart High-Side Power Switch BTS 5234G
For open load diagnosis in off state an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account.
V bb(min) - V OUT(OL,max) R OL = ----------------------------------------------------------I leakage Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5234G. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended.
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN.
SEN t
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
SEN.emf
Figure 17
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS 5234G is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level.
Data Sheet
21
V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
4.3.4
Electrical Characteristics
Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 C to +150 C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 C Pos. Parameter Symbol Limit Values min. Open Load at OFF-State 4.3.1 4.3.2 Open load detection threshold voltage Sense signal in case of open load Sense signal current limitation Sense signal invalid after negative input slope Fault signal settling time typ. max. Unit Test Conditions
VOUT(OL) VIS(fault)
1.6 3.5
2.8
4.4 6.5
V V
4.3.3 4.3.4
IIS(LIM) td(fault)
2 1.2
mA ms
VIN = 0 V VOUT = Vbb IIS = 1 mA VIN = 0 V VOUT = Vbb VIN = 5 V to 0 V VOUT = Vbb VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA VIN = 5 V Tj = -40 C
4.3.5
ts(fault)
200
s
Load Current Sense ON-State 4.3.6 Current sense ratio
kILIS
1000 2300 2410 2465 1400 2465 2520 2580 5.0 4035 3050 2920 2850 3410 2920 2875 2870 6.2 8000 3580 3380 3275 6000 3275 3220 3160 7.5 5 V A
IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A
4.3.7 4.3.8 Current sense voltage VIS(LIM) limitation
Tj = 150 C
IIS(LH) Current sense leakage/offset current
IIS = 0.5 mA IL = 3.5 A VIN = 5 V IL = 0 A
Data Sheet
22
V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 C to +150 C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 C Pos. 4.3.9 Parameter Current sense leakage, while diagnosis disabled Symbol Limit Values min. typ. max. 2 A Unit Test Conditions
IIS(dis)
VSEN = 0 V IL = 3.5 A VIN = 0 V to 5 V IL = 3.5 A
1)
4.3.10 Current sense settling tsIS(ON) time to IIS static 10% after positive input slope 4.3.11 Current sense settling tsIS(LC) time to IIS static 10% after change of load current Sense Enable 4.3.12 Input resistance 4.3.13 4.3.14 4.3.15 4.3.16 4.3.17
300
s
50
s
VIN = 5 V IL = 1.3 A to 2.2 A
1)
RSEN L-input level VSEN(L) H-input level VSEN(H) ISEN(L) L-input current H-input current ISEN(H) Current sense settling tsIS(SEN)
time
1.8 -0.3 2.5 3 10
3.5
5.5 1.0 5.7
k V V A A s
18 38 3
75 75 25
4.3.18 Current sense deactivation time
1)
tdIS(SEN)
25
s
VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 3.5 A RS = 5 k 1)
Not subject to production test, specified by design
Data Sheet
23
V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
Package Outlines BTS 5234G
5
Package Outlines BTS 5234G
P-DSO-20-21 (Plastic Dual Small Outline Package)
2.65 max
0.35 x 45
+0.09
2.45 -0.2
0.2 -0.1
7.6 -0.2 1)
1.27 0.35 +0.15 2) 20 0.2 24x 11 0.1
0.4 +0.8 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. SMD = Surface Mounted Device Data Sheet 24 Dimensions in mm V1.0, 2004-01-23
0.23
8 ma x
Smart High-Side Power Switch BTS 5234G
Revision History
6
Version V1.0
Revision History
Date 04-01-23 Changes initial version
Data Sheet
25
2004-01-23
Smart High-Side Power Switch BTS 5234G
Revision History
Data Sheet
26
V1.0, 2004-01-23
Smart High-Side Power Switch BTS 5234G
Edition 2004-01-23 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 1/31/04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
27
2004-01-23
http://www.infineon.com
Published by Infineon Technologies AG

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